Datasheet > STGWA80H65DFBAG

STGWA80H65DFBAG

更新时间： 2024-10-02 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
14页	275K
描述
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

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STGWA80H65DFBAG 数据手册

STGWA80H65DFBAG

Datasheet

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT

in a TO-247 long leads

Features

•

AEC-Q101 qualified

High-speed switching series

Maximum junction temperature: T_J= 175 °C

Low V_CE(sat)= 1.65 V (typ.) @ I_C= 80 A

Minimized tail current

TO-247 long leads

Tight parameter distribution

C(2, TAB)

Positive temperature V_CE(sat)coefficient

Soft and very fast recovery antiparallel diode

Applications

G(1)

•

PFC

High frequency converters

Description

E(3)

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

G1C2TE3_diode

Product status link

STGWA80H65DFBAG

Product summary

Order code

STGWA80H65DFBAG

G80H65DFBAG

TO-247 long leads

Tube

Marking

Package

Packing

DS14160 - Rev 1 - December 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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