Datasheet > STGWT28IH120DF

STGWT28IH120DF

更新时间： 2024-01-18 16:58:01

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
11页	630K
描述
IGBT

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中文翻译

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技术参数
数据手册

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STGWT28IH120DF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.84
最大集电极电流 (IC)：	50 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	313 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

STGWT28IH120DF 数据手册

STGW28IH120DF

STGWT28IH120DF

1200 V, 25 A IH series

trench gate field-stop IGBT

Datasheet - preliminary data

Features

 Designed for soft commutation only

 Maximum junction temperature: T = 175 °C

 Minimized tail current

 Low saturation voltage: V

= 2.0 V (typ.)

CE(sat)

@ I = 25 A

 Tight parameters distribution

 Safe paralleling

 Low V soft recovery co-packaged diode

TO-247

TO-3P

 Low thermal resistance

 Lead free package

Applications

Figure 1. Internal schematic diagram

 Induction heating

 Microwave oven

 Resonant converters

Description

These IGBTs are developed using an advanced

proprietary trench gate field-stop structure and

performance is optimized in both conduction and

switching losses. A freewheeling diode with a low

drop forward voltage is co-packaged. The result is

a product specifically designed to maximize

efficiency for any resonant and soft-switching

application.

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW28IH120DF

STGWT28IH120DF

GW28IH120DF

GWT28IH120DF

TO-247

TO-3P

Tube

March 2013

DocID023490 Rev 4

1/11

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...11

中文翻译

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