Datasheet > STGWT60H65FB

STGWT60H65FB

更新时间： 2023-12-20 18:44:52

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
16页	1228K
描述
650 V、60 A高速沟槽栅场截止HB系列IGBT

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STGWT60H65FB 数据手册

STGW60H65FB

STGWT60H65FB

Trench gate field-stop IGBT, HB series

650 V, 60 A high speed

Datasheet

production data

Features

• Maximum junction temperature: T_J= 175 °C

• High speed switching series

• Minimized tail current

TAB

• V_CE(sat)= 1.6 V (typ.) @ I_C= 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

TO-247

TO-3P

Applications

• Photovoltaic inverters

Figure 1. Internal schematic diagram

• High frequency converters

C (2, TAB)

Description

These are IGBT devices developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the new HB

series of IGBTs which represent an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, a slightly positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

G (1)

E (3)

Table 1. Device summary

Order code

Marking

Package

Packing

STGW60H65FB

STGWT60H65FB

GW60H65FB

TO-247

TO-3P

Tube

GWT60H65FB

April 2015

DocID025187 Rev 4

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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