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STGY50NC60WD PDF预览

STGY50NC60WD

更新时间: 2024-11-18 03:27:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
11页 135K
描述
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT

STGY50NC60WD 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67最大集电极电流 (IC):80 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5.75 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):260 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):271 ns标称接通时间 (ton):69 ns
Base Number Matches:1

STGY50NC60WD 数据手册

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STGY50NC60WD  
N-channel 600V - 50A - Max247  
Very fast PowerMESH™ IGBT  
PRELIMINARY DATA  
General features  
VCE(sat)  
(max)@25°C @100°C  
IC  
VCES  
Type  
STGY50NC60WD 600V  
< 2.5V 50A  
High frequency operation  
3
2
1
Low C  
/ C  
ratio (no cross-conduction  
IES  
RES  
susceptbility)  
Max247  
Very soft ultra fast recovery antiparallel diode  
Description  
Using the latest high voltage technology based on  
a patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs, the  
PowerMESH™ IGBTs, with outstanding  
Internal schematic diagram  
performances. The suffix “W” identifies a family  
optimized for very high frequency application.  
Applications  
High frequency inverters  
SMPS and PFC in both hard switch and  
resonant topologies  
Motor drivers, UPS  
Order codes  
Part number  
Marking  
Package  
Packaging  
STGY50NC60WD  
GY50NC60WD  
Max247  
Tube  
October 2006  
Rev 1  
1/11  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
11  

STGY50NC60WD 替代型号

型号 品牌 替代类型 描述 数据表
IXXH50N60C3D1 IXYS

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Extreme Light Punch Through IGBT for 20-60 kHz Switching

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