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STGY50NB60 PDF预览

STGY50NB60

更新时间: 2024-01-18 00:02:34
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
6页 47K
描述
N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT

STGY50NB60 数据手册

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STGY50NB60HD  
N-CHANNEL 50A - 600V MAX247  
PowerMESH IGBT  
PRELIMINARY DATA  
TYPE  
VCES  
VCE(sat)  
< 2.8 V  
IC  
STGY50NB60HD  
600 V  
50 A  
HIGH INPUT IMPEDANCE  
(VOLTAGEDRIVEN)  
LOW ON-VOLTAGEDROP (VCESAT)  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
VERY HIGH FREQUENCY OPERATION  
OFF LOSSES INCLUDE TAIL CURRENT  
CO-PACKAGED WITH TURBOSWITCH  
ANTIPARALLEL DIODE  
3
2
1
MAX247  
DESCRIPTION  
Using the latest high voltage technology based  
on a patented strip layout, STMicroelectronics  
has designed an advanced family of IGBTs, the  
PowerMESH  
IGBTs,  
with  
outstanding  
perfomances. The suffix ”H” identifies a family  
optimized to achieve very low switching times for  
high frequency applications (<120kHz).  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
WELDING EQUIPMENTS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VGE  
IC  
Parameter  
Value  
600  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Gate-Emitter Voltage  
V
V
± 20  
100  
o
Collector Current (continuous) at Tc = 25 C  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
50  
A
I
CM()  
Collector Current (pulsed)  
400  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
250  
W
Derating Factor  
2
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
June 1999  

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