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STGY50NB60HD PDF预览

STGY50NB60HD

更新时间: 2024-02-19 05:43:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
6页 47K
描述
N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT

STGY50NB60HD 技术参数

生命周期:Obsolete包装说明:MAX247, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):540 ns
标称接通时间 (ton):90 nsBase Number Matches:1

STGY50NB60HD 数据手册

 浏览型号STGY50NB60HD的Datasheet PDF文件第2页浏览型号STGY50NB60HD的Datasheet PDF文件第3页浏览型号STGY50NB60HD的Datasheet PDF文件第4页浏览型号STGY50NB60HD的Datasheet PDF文件第5页浏览型号STGY50NB60HD的Datasheet PDF文件第6页 
STGY50NB60HD  
N-CHANNEL 50A - 600V MAX247  
PowerMESH IGBT  
PRELIMINARY DATA  
TYPE  
VCES  
VCE(sat)  
< 2.8 V  
IC  
STGY50NB60HD  
600 V  
50 A  
HIGH INPUT IMPEDANCE  
(VOLTAGEDRIVEN)  
LOW ON-VOLTAGEDROP (VCESAT)  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
VERY HIGH FREQUENCY OPERATION  
OFF LOSSES INCLUDE TAIL CURRENT  
CO-PACKAGED WITH TURBOSWITCH  
ANTIPARALLEL DIODE  
3
2
1
MAX247  
DESCRIPTION  
Using the latest high voltage technology based  
on a patented strip layout, STMicroelectronics  
has designed an advanced family of IGBTs, the  
PowerMESH  
IGBTs,  
with  
outstanding  
perfomances. The suffix ”H” identifies a family  
optimized to achieve very low switching times for  
high frequency applications (<120kHz).  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
WELDING EQUIPMENTS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VGE  
IC  
Parameter  
Value  
600  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Gate-Emitter Voltage  
V
V
± 20  
100  
o
Collector Current (continuous) at Tc = 25 C  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
50  
A
I
CM()  
Collector Current (pulsed)  
400  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
250  
W
Derating Factor  
2
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
June 1999  

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