生命周期: | Obsolete | 包装说明: | MAX247, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 540 ns |
标称接通时间 (ton): | 90 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGY50NC60WD | STMICROELECTRONICS |
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N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT |
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STGYA120M65DF2 | STMICROELECTRONICS |
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650 V、120 A沟槽栅场截止低损耗M系列IGBT |
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STGYA120M65DF2AG | STMICROELECTRONICS |
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汽车级650 V、120 A沟槽栅场截止M系列低损耗IGBT,Max247长引线封装 |
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STGYA50H120DF2 | STMICROELECTRONICS |
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1200 V、50 A高速沟槽栅场截止HB2系列IGBT,Max247长引线封装 |
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STGYA50M120DF3 | STMICROELECTRONICS |
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1200 V、50 A沟槽栅场截止低损耗M系列IGBT,Max247长引线封装 |
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STGYA75H120DF2 | STMICROELECTRONICS |
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1200 V、75 A高速沟槽栅场截止HB2系列IGBT,TO-247长引线封装 |
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STH | VISHAY |
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SuperTan? Wet Tantalum Capacitors With Hermetic Seal, Extended Range, Improved Vibration C |
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STH-010-0.50-G-D-A-K-TR | SAMTEC |
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Board Connector, 20 Contact(s), 2 Row(s), Male, Straight, 0.02 inch Pitch, Surface Mount T |
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STH-010-0.50-G-D-K-TR | SAMTEC |
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Board Stacking Connector, 20 Contact(s), 2 Row(s), Male, Straight, 0.02 inch Pitch, Surfac |
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STH-010-0.50-G-D-TR | SAMTEC |
获取价格 |
Board Stacking Connector, 20 Contact(s), 2 Row(s), Male, Straight, Surface Mount Terminal, |
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