Datasheet > STGWA80H65FBAG

STGWA80H65FBAG

更新时间： 2024-10-02 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
12页	252K
描述
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

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STGWA80H65FBAG 数据手册

STGWA80H65FBAG

Datasheet

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT

in a TO-247 long leads

Features

•

AEC-Q101 qualified

Maximum junction temperature: T_J= 175 °C

High-speed switching series

Minimized tail current

TO-247 long leads

V_CE(sat)= 1.65 V (typ.) @ I_C= 80 A

Tight parameters distribution

Safer paralleling

C(2, TAB)

Low thermal resistance

G(1)

Applications

•

PFC

High frequency converters

E(3)

G1C2TABE3_NO_DIODE

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA80H65FBAG

Product summary

Order code

STGWA80H65FBAG

G80H65FBAG

TO-247 long leads

Tube

Marking

Package

Packing

DS14238 - Rev 1 - February 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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