Datasheet > STGWT20IH125DF

STGWT20IH125DF

更新时间： 2023-12-20 18:45:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	1351K
描述
1250 V、20 A IH系列沟槽栅场截止IGBT

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STGWT20IH125DF 数据手册

STGW20IH125DF

STGWT20IH125DF

1250 V, 20 A IH series

trench gate field-stop IGBT

Datasheet

production data

Features

TAB

• Designed for soft commutation only

• Maximum junction temperature: T_J= 175 °C

• Minimized tail current

• V_CE(sat)= 2.0 V (typ.) @ I_C= 15 A

• Tight parameters distribution

• Safe paralleling

• Very low V_Fsoft recovery co-packaged diode

• Low thermal resistance

TO-247

TO-3P

• Lead free package

Applications

Figure 1. Internal schematic diagram

• Induction heating

• Microwave oven

• Resonant converters

C (2, TAB)

Description

These IGBTs are developed using an advanced

proprietary trench gate field-stop structure and

performance is optimized in both conduction and

switching losses. A freewheeling diode with a low

drop forward voltage is co-packaged. The result is

a product specifically designed to maximize

efficiency for any resonant and soft-switching

application.

G (1)

E (3)

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW20IH125DF

STGWT20IH125DF

G20IH125DF

TO-247

TO-3P

Tube

February 2014

DocID025269 Rev 2

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

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