Datasheet > STGWT40HP65FB

STGWT40HP65FB

更新时间： 2024-11-26 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	903K
描述
650 V、40 A高速沟槽栅场截止HB系列IGBT

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STGWT40HP65FB 数据手册

STGWT40HP65FB

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

Datasheet - production data

Features

TAB



Maximum junction temperature: T_J= 175 °C

Minimized tail current

V_CE(sat)= 1.6 V (typ.) @ I_C= 40 A

Tight parameter distribution

Co-packed diode for protection

Safe paralleling

Low thermal resistance

TO-3P

Applications

Figure 1: Internal schematic diagram



Power factor corrector (PFC)

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGWT40HP65FB

GWT40HP65FB

TO-3P

Tube

July 2016

DocID028465 Rev 3

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

中文翻译

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