Datasheet > STGWT30HP65FB

STGWT30HP65FB

更新时间： 2023-12-20 18:45:29

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	537K
描述
650 V、30 A高速沟槽栅场截止HB系列IGBT

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STGWT30HP65FB 数据手册

STGWT30HP65FB

Datasheet

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Features

TAB

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

Low saturation voltage: V_CE(sat)= 1.6 V (typ.) @ I_C= 40 A

Tight parameter distribution

TO-3P

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

C(2, TAB)

Very fast soft recovery antiparallel diode

G(1)

Applications

•

Power factor corrector (PFC)

E(3)

NG1E3C2T

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

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STGWT30HP65FB

Product summary

Order code

Marking

STGWT30HP65FB

GWT30HP65FB

TO-3P

Package

Packing

Tube

DS11375 - Rev 3 - July 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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