Datasheet > STGWA60V60DWFAG

STGWA60V60DWFAG

更新时间： 2024-11-22 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
16页	615K
描述
Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

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STGWA60V60DWFAG 数据手册

STGWA60V60DWFAG

Datasheet

Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series

IGBT featuring freewheeling SiC diode

Features

•

AEC-Q101 qualified

Maximum junction temperature: T_J= 175 °C

V_CE(sat)= 1.85 V (typ.) @ I_C= 60 A

Tail-less switching current

Tight parameter distribution

Low thermal resistance

C(2, TAB)

Positive V_CE(sat)temperature coefficient

Silicon carbide diode with no-reverse recovery charge is co-packaged in

freewheeling configuration

G(1)

Applications

•

Automotive converters

Totem-pole power factor correction

E(3)

NG1E3C2T

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the V series IGBTs, which represent an optimum

compromise between conduction and switching losses to maximize the efficiency of

very high frequency converters. Furthermore, the positive V_CE(sat)temperature

coefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is

shown at turn-off of the SiC diode and the already minimal capacitive turn-off

behavior is independent of temperature. Its high forward surge capability ensures

good robustness during transient phases.

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STGWA60V60DWFAG

Product summary

Order code

Marking

STGWA60V60DWFAG

G60V60DWFAG

TO-247 long leads

Tube

Package

Packing

DS13117 - Rev 2 - October 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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