Datasheet > STGWA80H65DFB

STGWA80H65DFB

更新时间： 2024-11-22 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
16页	649K
描述
650 V、80 A高速沟槽栅场截止HB系列IGBT

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STGWA80H65DFB 数据手册

STGWA80H65DFB

Datasheet

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

Low saturation voltage: V_CE(sat)= 1.6 V (typ.) @ I_C= 80 A

Tight parameter distribution

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA80H65DFB

Product summary

Order code

STGWA80H65DFB

GWA80H65DFB

TO-247 long leads

Tube

Marking

Package

Packing

DS11933 - Rev 2 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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STGWA80H65DFBAG	STMICROELECTRONICS	获取价格	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247
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