Datasheet > STGWA60H65DFB

STGWA60H65DFB

更新时间： 2024-11-22 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
21页	685K
描述
650 V、60 A高速沟槽栅场截止HB系列IGBT

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技术参数
数据手册

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STGWA60H65DFB 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	2.25	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGWA60H65DFB 数据手册

STGW60H65DFB, STGWA60H65DFB,

STGWT60H65DFB

Datasheet

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

TO-247

TO-247 long leads

Low saturation voltage: V_CE(sat)= 1.6 V (typ.) @ I_C= 60 A

Tight parameter distribution

TAB

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

TO-3P

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High-frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGW60H65DFB

STGWT60H65DFB

STGWA60H65DFB

DS9535 - Rev 8 - July 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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中文翻译

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