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STGWA25H120F2 PDF预览

STGWA25H120F2

更新时间: 2024-11-22 14:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
17页 950K
描述
1200 V、25 A高速沟槽栅场截止H系列IGBT

STGWA25H120F2 数据手册

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STGW25H120F2,  
STGWA25H120F2  
Trench gate field-stop IGBT, H series  
1200 V, 25 A high speed  
Datasheet  
-
production data  
Features  
Maximum junction temperature: TJ = 175 °C  
High speed switching series  
Minimized tail current  
VCE(sat) = 2.1 V (typ.) @ IC = 25 A  
5 µs minimum short circuit withstand time at  
TJ=150 °C  
Tight parameters distribution  
Safe paralleling  
72ꢀꢁꢂꢃ  
72ꢀꢁꢂꢃꢄORQJꢄOHDGV  
Low thermal resistance  
Applications  
Figure 1. Internal schematic diagram  
C (2)  
Uninterruptible power supply  
Welding machines  
Photovoltaic inverters  
Power factor correction  
High frequency converters  
G (1)  
Description  
These devices are IGBTs developed using an  
advanced proprietary trench gate field-stop  
structure. These devices are part of the H series  
of IGBTs, which represent an optimum  
SC12850  
E (3)  
compromise between conduction and switching  
losses to maximize the efficiency of high  
switching frequency converters. Moreover, a  
slightly positive VCE(sat) temperature coefficient  
and very tight parameter distribution result in  
safer paralleling operation.  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STGW25H120F2  
STGWA25H120F2  
G25H120F2  
G25H120F2  
TO-247  
Tube  
Tube  
TO-247 long leads  
March 2015  
DocID026003 Rev 4  
1/17  
This is information on a product in full production.  
www.st.com  
17  

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