Datasheet > STGWA40IH65DF

STGWA40IH65DF

更新时间： 2024-10-02 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关栅双极性晶体管
页数	文件大小	规格书
15页	342K
描述
650 V、40 A软开关沟槽栅场截止IH系列IGBT，TO-247长引线封装

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中文翻译

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技术参数
数据手册

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STGWA40IH65DF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	32 weeks
风险等级：	2.27	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGWA40IH65DF 数据手册

STGWA40IH65DF

Datasheet

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT

in a TO‑247 long leads package

Features

•

Designed for soft commutation only

Maximum junction temperature: T_J= 175 °C

V_CE(sat)= 1.5 V (typ.) @ I_C= 40 A

Minimized tail current

Tight parameter distribution

Low thermal resistance

Low drop voltage freewheeling co-packaged diode

Positive V_CE(sat)temperature coefficient

C(2, TAB)

Applications

G(1)

•

Induction heating

Resonant converters

Microwave ovens

E(3)

NG1E3C2T

Description

The newest IGBT 650 V soft-switching IH series has been developed using an

advanced proprietary trench gate field-stop structure, whose performance is

optimized both in conduction and switching losses for soft commutation. A

freewheeling diode with a low drop forward voltage is included. The result is a

product specifically designed to maximize efficiency for any resonant and soft-

switching applications.

Product status link

STGWA40IH65DF

Product summary

Order code

Marking

STGWA40IH65DF

G40IH65DF

Package

Packing

TO-247 long leads

Tube

DS11801 - Rev 3 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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