品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
15页 | 536K | |
描述 | ||
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGWA50HP65FB2 | STMICROELECTRONICS |
获取价格 |
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads pac | |
STGWA50IH65DF | STMICROELECTRONICS |
获取价格 |
650 V、50 A软开关沟槽栅场截止IH系列IGBT,TO-247长引线封装 | |
STGWA50M65DF2 | STMICROELECTRONICS |
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沟槽栅场截止IGBT,M系列,650 V、50 A,低损耗 | |
STGWA60H65DFB | STMICROELECTRONICS |
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650 V、60 A高速沟槽栅场截止HB系列IGBT | |
STGWA60V60DF | STMICROELECTRONICS |
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600 V、60 A超高速沟槽栅场截止IGBT | |
STGWA60V60DWFAG | STMICROELECTRONICS |
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Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring fre | |
STGWA75H65DFB2 | STMICROELECTRONICS |
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads pac | |
STGWA75M65DF2 | STMICROELECTRONICS |
获取价格 |
沟槽栅场截止IGBT,M系列,650 V、75 A,低损耗 | |
STGWA80H65DFB | STMICROELECTRONICS |
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650 V、80 A高速沟槽栅场截止HB系列IGBT | |
STGWA80H65DFBAG | STMICROELECTRONICS |
获取价格 |
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 |