Datasheet > STGWA40H120F2

STGWA40H120F2

更新时间： 2024-10-02 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	995K
描述
1200 V、40 A高速沟槽栅场截止H系列IGBT

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中文翻译

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技术参数
数据手册

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STGWA40H120F2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	32 weeks	风险等级：	5.7
Base Number Matches：	1

STGWA40H120F2 数据手册

STGW40H120F2,

STGWA40H120F2

Trench gate field-stop IGBT, H series

1200 V, 40 A high speed

Datasheet

production data

Features

• Maximum junction temperature: T_J= 175 °C

• High speed switching series

• Minimized tail current

• V_CE(sat)= 2.1 V (typ.) @ I_C= 40 A

• 5 µs minimum short-circuit withstand time at

ꢂ

ꢁ

T_J= 150 °C

ꢀ

• Safe paralleling

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• Low thermal resistance

Applications

Figure 1. Internal schematic diagram

• Uninterruptible power supply

• Welding machines

C (2, TAB)

• Photovoltaic inverters

• Power factor correction

• High frequency converters

G (1)

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the H series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Moreover, a

slightly positive V_CE(sat)temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.

SC12850

E (3)

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW40H120F2

STGWA40H120F2

G40H120F2

TO-247

Tube

TO-247 long leads

March 2015

DocID025853 Rev 3

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

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