Datasheet > STGWA40H65DFB

STGWA40H65DFB

更新时间： 2024-10-02 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
16页	526K
描述
650 V、40 A高速沟槽栅场截止HB系列IGBT

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技术参数
数据手册

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STGWA40H65DFB 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	5.68	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGWA40H65DFB 数据手册

STGWA40H65DFB

Datasheet

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

Low saturation voltage: V_CE(sat)= 1.6 V (typ.) @ I_C= 40 A

Tight parameter distribution

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA40H65DFB

Product summary

Order code

STGWA40H65DFB

G40H65DFB

TO-247 long leads

Tube

Marking

Package

Packing

DS11680 - Rev 2 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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中文翻译

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与STGWA40H65DFB相关器件

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STGWA50HP65FB2	STMICROELECTRONICS	获取价格	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads pac
STGWA50IH65DF	STMICROELECTRONICS	获取价格	650 V、50 A软开关沟槽栅场截止IH系列IGBT，TO-247长引线封装