Datasheet > STGWA25M120DF3

STGWA25M120DF3

更新时间： 2024-11-22 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	507K
描述
1200 V、25 A沟槽栅场截止低损耗M系列IGBT

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STGWA25M120DF3 数据手册

STGWA25M120DF3

Datasheet

Trench gate field-stop, 1200 V, 25 A, low-loss, M series IGBT

in a TO-247 long leads package

Features

•

Maximum junction temperature: T_J= 175 °C

10 μs of short-circuit withstand time

Low V_CE(sat)= 1.85 V (typ.) @ I_C= 25 A

Tight parameter distribution

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Soft- and fast-recovery antiparallel diode

C(2, TAB)

Applications

•

Industrial drives

UPS

G(1)

Solar

Welding

E(3)

NG1E3C2T

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive V_CE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA25M120DF3

Product summary

Order code

Marking

STGWA25M120DF3

G25M120DF3

TO-247 long leads

Tube

Package

Packing

DS12637 - Rev 1 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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STGWA25M120DF3 替代型号

型号	品牌	替代类型	描述	数据表
HGTG18N120BND	FAIRCHILD	功能相似	54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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