Datasheet > STGWA30HP65FB2

STGWA30HP65FB2

更新时间： 2024-10-02 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	502K
描述
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-247 long leads package

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STGWA30HP65FB2 数据手册

STGWA30HP65FB2

Datasheet

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT

in a TO-247 long leads package

Features

•

Maximum junction temperature : T_J= 175 °C

Low V_CE(sat)= 1.65 V(typ.) @ I_C= 30 A

Co-packaged protection diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive V_CE(sat)temperature coefficient

C(2, TAB)

Applications

•

Welding

G(1)

Power factor correction

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better V_CE(sat)behavior at low current

values, as well as in terms of reduced switching energy. A diode used for protection

purposes only is co-packaged in antiparallel with the IGBT. The result is a product

specifically designed to maximize efficiency for a wide range of fast applications.

E(3)

NG1E3C2T

Product status link

STGWA30HP65FB2

Product summary

Order code

Marking

STGWA30HP65FB2

G30HP65FB2

TO-247 long leads

Tube

Package

Packing

DS13149 - Rev 1 - November 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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