Datasheet > STGWA30M65DF2

STGWA30M65DF2

更新时间： 2024-10-02 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	747K
描述
沟槽栅场截止IGBT，M系列，650 V、30 A，低损耗

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STGWA30M65DF2 数据手册

STGW30M65DF2,

STGWA30M65DF2

Trench gate field-stop IGBTs, M series 650 V, 30 A

low-loss in TO-247 and TO-247 long leads packages

Datasheet - production data

Features



6 µs of minimum short-circuit withstand time

V_CE(sat)= 1.55 V (typ.) @ I_C= 30 A

Tight parameters distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Applications



Motor control

UPS

PFC

Figure 1: Internal schematic diagram

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. The devices are part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

TO-247

Packaging

Tube

STGW30M65DF2

STGWA30M65DF2

G30M65DF2

TO-247 long leads

Tube

April 2017

DocID027768 Rev 5

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

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