Datasheet > STGWA40H120DF2

STGWA40H120DF2

更新时间： 2024-10-02 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	819K
描述
1200 V、40 A高速沟槽栅场截止H系列IGBT

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中文翻译

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技术参数
数据手册

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STGWA40H120DF2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	32 weeks
风险等级：	5.67	Base Number Matches：	1

STGWA40H120DF2 数据手册

STGW40H120DF2,

STGWA40H120DF2

Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Datasheet - production data

Features



Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

V_CE(sat)= 2.1 V (typ.) @ I_C= 40 A

5 μs minimum short circuit withstand time at

T_J=150 °C



Safe paralleling

Very fast recovery antiparallel diode

Low thermal resistance

Applications



Uninterruptible power supply

Welding machines

Photovoltaic inverters

Power factor correction

High frequency converters

Figure 1: Internal schematic diagram

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the H series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Furthermore, a

slightly positive V_CE(sat)temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGW40H120DF2

STGWA40H120DF2

G40H120DF2

TO-247

Tube

TO-247 long leads

June 2016

DocID023753 Rev 5

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

中文翻译

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