Datasheet > STGWA25H120DF2

STGWA25H120DF2

更新时间： 2024-11-22 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	474K
描述
1200 V、25 A高速沟槽栅场截止H系列IGBT

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STGWA25H120DF2 数据手册

STGW25H120DF2, STGWA25H120DF2

Datasheet

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

V_CE(sat)= 2.1 V (typ.) @ I_C= 25 A

5 μs minimum short circuit withstand time at T_J= 150 °C

Safe paralleling

TO-247 long leads

TO-247

Low thermal resistance

Very fast recovery antiparallel diode

Applications

•

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the H series of IGBTs, which represents an

optimum compromise between conduction and switching losses to maximize the

efficiency of high-switching frequency converters. Furthermore, a slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status links

STGW25H120DF2

STGWA25H120DF2

Product summary

Order code

Marking

STGW25H120DF2

G25H120DF2

TO-247

Package

Packing

Tube

Order code

Marking

STGWA25H120DF2

G25H120DF2

TO-247 long leads

Tube

Package

Packing

DS9297 - Rev 5 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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中文翻译

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