Datasheet > STD85N3LH5_10

STD85N3LH5_10

更新时间： 2024-11-24 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	814K
描述
N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET

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STD85N3LH5_10 数据手册

STD85N3LH5

STP85N3LH5, STU85N3LH5

N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK

STripFET™ V Power MOSFET

Features

Type

V_DSS

R_DS(on)max.

I_D

STD85N3LH5

STP85N3LH5

STU85N3LH5

30 V

< 0.005 Ω

80 A

DPAK

IPAK

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

■ High avalanche ruggedness

■ Low gate drive power losses

DS(on)

TO-220

Application

Switching applications

Figure 1.

Internal schematic diagram

Description

This product utilizes the 5 generation of design

rules of ST’s proprietary STripFET technology.

The lowest available R

*Q , in the standard

DS(on)

packages, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD85N3LH5

STP85N3LH5

STU85N3LH5

DPAK

TO-220

IPAK

Tape and reel

85N3LH5

Tube

July 2010

Doc ID 13833 Rev 7

1/16

www.st.com

12 3 4 5 6 7...16

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