STD882D

更新时间： 2024-02-17 10:04:24

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
4页	291K
描述
NPN Silicon Transistor

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中文翻译

获取价格

技术参数
数据手册

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STD882D 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

STD882D 数据手册

STD882D

NPN Silicon Transistor

Description

• Suitable for low voltage large current drivers

• Excellent h_FELinearity

PIN Connection

• Complementary pair with STB772D

• Switching Application

Features

• Low collector saturation voltage

V_CE(sat)=0.4V(Max.)

TO-252

Ordering Information

Type NO.

Marking

Package Code

STD882D

STD882

TO-252

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

V_CBO

V_CEO

V_EBO

I_C

A(DC)

A(Pulse)

Collector current

I_CP*

P_C

Collector Power dissipation (Tc=25℃)

Junction temperature

T_j

150

-55~150

°C

Storage temperature

T_stg

°C

* : Single pulse, tp= 300 ㎲

Electrical Characteristics

(Ta=25°C)

Characteristic

Symbol

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA, I_C=0

V_CB=30V, I_E=0

0.1

320

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

V_CE=2V, I_C=0.5A

V_CE=2V, I_C=2A

160

100

h_FE

DC current gain

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=3A, I_B=100mA

V_CE=6V, I_E=-50mA

V_CB=20V, I_E=0, f=1MHz

0.4

150

MHz

Collector output capacitance

* HFE rank :160~320 Only

C_ob

KSD-T6O020-001

12 3 4

中文翻译

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