Datasheet > STD8N06

STD8N06

更新时间： 2024-11-23 22:19:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	173K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STD8N06 数据手册

STD8N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

< 0.25 Ω

I_D

STD8N06

60 V

8 A

■

TYPICAL R_DS(on)= 0.21 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_{DG R}

V_GS

± 20

I_D

5.6

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.23

-65 to 175

175

W/^oC

^oC

T_stg

T_j

Storage Temperature

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

下载PDF

与STD8N06相关器件

型号	品牌	获取价格	描述	数据表
STD8N061	STMICROELECTRONICS	获取价格	8A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
STD8N06-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-251
STD8N06T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-252AA
STD8N10	STMICROELECTRONICS	获取价格	8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
STD8N10-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-251
STD8N10L	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD8N10L1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-251
STD8N10T4	STMICROELECTRONICS	获取价格	8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
STD8N60DM2	STMICROELECTRONICS	获取价格	N沟道600 V、550 mOhm典型值、8 A MDmesh DM2功率MOSFET，D
STD8N65M5	STMICROELECTRONICS	获取价格	N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power