5秒后页面跳转
STD8NM50N PDF预览

STD8NM50N

更新时间: 2024-09-30 12:27:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 1164K
描述
N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

STD8NM50N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.71雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.79 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):20 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD8NM50N 数据手册

 浏览型号STD8NM50N的Datasheet PDF文件第2页浏览型号STD8NM50N的Datasheet PDF文件第3页浏览型号STD8NM50N的Datasheet PDF文件第4页浏览型号STD8NM50N的Datasheet PDF文件第5页浏览型号STD8NM50N的Datasheet PDF文件第6页浏览型号STD8NM50N的Datasheet PDF文件第7页 
STD8NM50N, STP8NM50N, STU8NM50N  
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET  
in DPAK, TO-220 and IPAK packages  
Datasheet — production data  
Features  
TAB  
Order codes VDSS@TJMAX RDS(on)max.  
ID  
3
1
STD8NM50N  
DPAK  
STP8NM50N  
STU8NM50N  
550 V  
< 0.79 Ω  
5 A  
TAB  
100% avalanche tested  
TAB  
Low input capacitance and gate charge  
Low gate input resistance  
3
3
2
2
1
1
IPAK  
TO-220  
Applications  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
These devices are N-channel Power MOSFETs  
developed using the second generation of  
MDmesh™ technology. This revolutionary Power  
MOSFET associates a vertical structure to the  
company’s strip layout to yield one of the world’s  
lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high  
efficiency converters.  
$ꢅꢆꢇ 4!"ꢈ  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
DPAK  
Packaging  
STD8NM50N  
STP8NM50N  
STU8NM50N  
Tape and reel  
Tube  
8NM50N  
TO-220  
IPAK  
September 2012  
Doc ID 17413 Rev 6  
1/19  
This is information on a product in full production.  
www.st.com  
19  

STD8NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STD7NM50N STMICROELECTRONICS

类似代替

N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220
STD7NM50N-1 STMICROELECTRONICS

功能相似

N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220
STP7NM50N STMICROELECTRONICS

功能相似

N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220

与STD8NM50N相关器件

型号 品牌 获取价格 描述 数据表
STD8NM60N STMICROELECTRONICS

获取价格

N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO-
STD8NM60N-1 STMICROELECTRONICS

获取价格

N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO-
STD8NM60ND STMICROELECTRONICS

获取价格

7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
STD8NS25 STMICROELECTRONICS

获取价格

N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERL
STD8NS25T4 STMICROELECTRONICS

获取价格

8A, 250V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3
STD90 SIRECTIFIER

获取价格

Thyristor-Diode Modules, Diode-Thyristor Modules
STD90 SIRECT

获取价格

Thyristor-Diode Modules, Diode-Thyristor Modules
STD901T STMICROELECTRONICS

获取价格

用于点火线圈的高压NPN达林顿晶体管
STD901T RECTRON

获取价格

Package / Case : TO-220;Mounting Style : Through Hole;Power Rating : 100 W;Transistor Pola
STD909 STMICROELECTRONICS

获取价格

15A, 80V, NPN, Si, POWER TRANSISTOR, TO-252