生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 45 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD8N10T4 | STMICROELECTRONICS |
获取价格 |
8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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STD8N60DM2 | STMICROELECTRONICS |
获取价格 |
N沟道600 V、550 mOhm典型值、8 A MDmesh DM2功率MOSFET,D |
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STD8N65M5 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power |
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STD8N65M5 | TI |
获取价格 |
a Phase-Dimmable, Primary-Side Regulated LED Driver |
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STD8N65M5TRL | STMICROELECTRONICS |
获取价格 |
7A, 650V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 |
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STD8N80K5 | STMICROELECTRONICS |
获取价格 |
N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET,DPA |
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STD8NF25 | STMICROELECTRONICS |
获取价格 |
N沟道250 V、318 mOhm典型值、8 A STripFET(TM) II功率MOS |
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STD8NM50N | STMICROELECTRONICS |
获取价格 |
N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packag |
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STD8NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO- |
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STD8NM60N-1 | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO- |
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