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STD8N65M5 PDF预览

STD8N65M5

更新时间: 2024-11-24 09:01:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
25页 1299K
描述
N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power MOSFET

STD8N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.12Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222062
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:DPAK (TO-252)_2
Samacsys Released Date:2015-07-28 09:15:31Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):120 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD8N65M5 数据手册

 浏览型号STD8N65M5的Datasheet PDF文件第2页浏览型号STD8N65M5的Datasheet PDF文件第3页浏览型号STD8N65M5的Datasheet PDF文件第4页浏览型号STD8N65M5的Datasheet PDF文件第5页浏览型号STD8N65M5的Datasheet PDF文件第6页浏览型号STD8N65M5的Datasheet PDF文件第7页 
STB8N65M5, STD8N65M5, STF8N65M5  
STI8N65M5, STP8N65M5, STU8N65M5  
N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET  
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK  
Features  
Type  
VDSS @ TJmax RDS(on) max. ID  
3
STB8N65M5  
STD8N65M5  
STF8N65M5  
STI8N65M5  
STP8N65M5  
STU8N65M5  
1
3
3
2
2
DPAK  
1
1
TO-220  
710 V  
< 0.6 Ω  
7 A  
TO-220FP  
Worldwide best R  
* area  
DS(on)  
3
3
1
Higher V  
rating  
2
DSS  
3
2
1
1
PAK  
High dv/dt capability  
PAK  
IPAK  
Excellent switching performance  
Easy to drive  
Figure 1.  
Internal schematic diagram  
100% avalanche tested  
$ꢅꢆꢇ  
Applications  
Switching applications  
Description  
'ꢅꢁꢇ  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB8N65M5  
STD8N65M5  
STF8N65M5  
STI8N65M5  
STP8N65M5  
STU8N65M5  
PAK  
DPAK  
Tape and reel  
Tape and reel  
Tube  
TO-220FP  
PAK  
8N65M5  
Tube  
TO-220  
IPAK  
Tube  
Tube  
July 2011  
Doc ID 16531 Rev 3  
1/25  
www.st.com  
25  

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