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STD888 PDF预览

STD888

更新时间: 2024-09-27 22:19:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
6页 130K
描述
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

STD888 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:TO-252, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):75
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD888 数据手册

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STD888  
®
HIGH CURRENT, HIGH PERFORMANCE,  
LOW VOLTAGE PNP TRANSISTOR  
Ordering Code  
Marking  
STD888  
D888  
VERY LOW COLLECTOR TO EMITTER  
SATURATION VOLTAGE  
DC CURRENT GAIN, hFE > 100  
5 A CONTINUOUS COLLECTOR CURRENT  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL (Suffix  
"T4")  
3
1
DPAK  
TO-252  
(Suffix "T4")  
APPLICATIONS  
POWER MANAGEMENT IN PORTABLE  
EQUIPMENT  
VOLTAGE REGULATION IN BIAS SUPPLY  
CIRCUITS  
SWITCHING REGULATOR IN BATTERY  
CHARGER APPLICATIONS  
HEAVY LOAD DRIVER  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured in low voltage PNP  
Planar Technology by using a "Base Island"  
layout.  
The resulting Transistor shows exceptional high  
gain performance coupled with very low  
saturation voltage.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
-60  
V
V
-30  
-6  
-5  
V
A
ICM  
Collector Peak Current (tp < 5 ms)  
-10  
A
o
Ptot  
Total Dissipation at TC = 25 C  
15  
W
oC  
oC  
Tstg  
Storage Temperature  
-65 to 150  
150  
Tj  
Max. Operating Junction Temperature  
1/6  
March 2003  

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