Datasheet > STD616A_03

STD616A_03

更新时间： 2024-01-30 04:09:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管高压
页数	文件大小	规格书
6页	122K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR

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中文翻译

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数据手册

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STD616A_03 数据手册

STD616A

HIGH VOLTAGE NPN POWER TRANSISTOR

■

REVERSE PINS OUT Vs STANDARD IPAK

(TO-251) / DPAK (TO-252) PACKAGES

HIGH VOLTAGE CAPABILITY

■

HIGH DC CURRENT GAIN

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX "-1")

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

■

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

APPLICATIONS:

SWITCH MODE POWER SUPPLIES

■

DESCRIPTION

The STD616A is manufactured using High

Voltage Multi Epitaxial Planar technology for high

switching speeds and high voltage withstand

capability.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

1000

450

Unit

1.6

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

2.4

I_B

0.8

I_BM

Base Peak Current (t_p< 5 ms)

1.2

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

June 2003

12 3 4 5 6

中文翻译

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