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STD616A PDF预览

STD616A

更新时间: 2024-02-14 12:59:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管高压
页数 文件大小 规格书
5页 45K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR

STD616A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

STD616A 数据手册

 浏览型号STD616A的Datasheet PDF文件第2页浏览型号STD616A的Datasheet PDF文件第3页浏览型号STD616A的Datasheet PDF文件第4页浏览型号STD616A的Datasheet PDF文件第5页 
STD616A-1  
HIGH VOLTAGE NPN POWER TRANSISTOR  
REVERSE PINS OUT Vs STANDARD IPAK  
(TO-251) PACKAGE  
HIGH VOLTAGE CAPABILITY  
HIGH DC CURRENT GAIN  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGEIN TUBE  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
3
2
1
APPLICATIONS:  
SWITCH MODE POWER SUPPLIES  
IPAK  
TO-251  
DESCRIPTION  
The STD616A-1 is manufactured using High  
Voltage Multi Epitaxial Planar technology for high  
switching speeds and high voltage withstand  
capability.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
1000  
450  
Unit  
V
V
12  
V
1.6  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
2.4  
A
IB  
0.8  
A
IBM  
Base Peak Current (tp < 5 ms)  
1.2  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
20  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  
April 1999  

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