Datasheet > STD12N60DM2AG

STD12N60DM2AG

更新时间： 2024-11-30 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	700K
描述
汽车级N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封装

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STD12N60DM2AG 数据手册

STD12N60DM2AG

Datasheet

Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2

Power MOSFET in a DPAK package

Features

TAB

@ T max.

DS(on)

max.

Order code

STD12N60DM2AG

650 V

430 mΩ

10 A

DPAK

•

AEC-Q101 qualified

Fast-recovery body diode

D(2, TAB)

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

G(1)

Extremely high dv/dt ruggedness

Zener-protected

S(3)

NG1D2TS3Z

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STD12N60DM2AG

Product summary

Order code

STD12N60DM2AG

12N60DM2

Marking

Package

Packing

DPAK

Tape and reel

DS12209 - Rev 5 - July 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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