STD12NM50ND

更新时间： 2024-11-01 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
13页	585K
描述
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK

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替代型号

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STD12NM50ND 数据手册

STB12NM50ND

STD12NM50ND

N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET

(with fast diode), D²PAK, DPAK

Preliminary Data

Features

Type

V_DSS(@Tjmax)R_DS(on)max

I_D

STB12NM50ND

STD12NM50ND

550 V

0.38 Ω

11 A

■ The worldwide best R

* area amongst the

DS(on)

fast recovery diode devices

D²PAK

DPAK

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

Figure 1.

Internal schematic diagram

■ Switching applications

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Description

The FDmesh™ II series belongs to the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company's strip layout

and associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode.Strongly recommended for

bridge topologies, in ZVS phase-shift converters.

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Table 1.

Device summary

Order codes

Marking

Package

D²PAK

DPAK

Packaging

STB12NM50ND

STD12NM50ND

12NM50ND

Tape and reel

September 2008

Rev 1

1/13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...13

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STD12NM50ND 替代型号

型号	品牌	替代类型	描述	数据表
STD12NM50N	STMICROELECTRONICS	类似代替	N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2

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