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STD12NM50NT4 PDF预览

STD12NM50NT4

更新时间: 2024-11-24 15:53:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
12页 324K
描述
11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK, 3 PIN

STD12NM50NT4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
风险等级:5.82Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD12NM50NT4 数据手册

 浏览型号STD12NM50NT4的Datasheet PDF文件第2页浏览型号STD12NM50NT4的Datasheet PDF文件第3页浏览型号STD12NM50NT4的Datasheet PDF文件第4页浏览型号STD12NM50NT4的Datasheet PDF文件第5页浏览型号STD12NM50NT4的Datasheet PDF文件第6页浏览型号STD12NM50NT4的Datasheet PDF文件第7页 
STP12NM50N - STF12NM50N  
STB12NM50N - STD12NM50N  
N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK  
SECOND GENERATION MDmesh™ MOSFET  
TARGET SPECIFICATION  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
DSS  
DS(on)  
STB12NM50N  
STD12NM50N  
STF12NM50N  
STP12NM50N  
500 V  
500 V  
500 V  
500 V  
< 0.38 Ω  
< 0.38 Ω  
< 0.38 Ω  
< 0.38 Ω  
11 A  
11 A  
11 A (*)  
11 A  
3
1
3
2
1
2
WORLD’S LOWEST ON RESISTANCE  
TYPICAL R (on) = 0.33Ω  
D PAK  
TO-220  
DS  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
LOW GATE INPUT RESISTANCE  
3
1
3
2
1
DESCRIPTION  
DPAK  
TO-220FP  
The STP12NM50N is realized with the second  
generation of MDmesh Technology. This revolu-  
tionary MOSFET associates a new vertical struc-  
ture to the Company's strip layout to yield the  
world's lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high ef-  
ficiency converters  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
The MDmesh™ II family is very suitable for in-  
creasing power density of high voltage converters  
allowing system miniaturization and higher effi-  
ciencies.  
Table 2: Order Codes  
SALES TYPE  
STB12NM50NT4  
STD12NM50NT4  
STF12NM50N  
STP12NM50N  
MARKING  
B12NM50N  
D12NM50N  
F12NM50N  
P12NM50N  
PACKAGE  
PACKAGING  
TAPE & REEL  
TAPE & REEL  
TUBE  
2
D PAK  
DPAK  
TO-220FP  
TO-220  
TUBE  
Rev. 1  
May 2005  
1/12  
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.  

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