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STD12N65M2 PDF预览

STD12N65M2

更新时间: 2024-11-30 14:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 992K
描述
N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET,DPAK封装

STD12N65M2 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.55Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:424669
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:STD12N65M2-2
Samacsys Released Date:2019-06-13 11:06:12Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):8 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):85 W子类别:FET General Purpose Power
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STD12N65M2 数据手册

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STD12N65M2  
Datasheet  
N-channel 650 V, 420 mΩ typ., 8 A MDmesh M2 Power MOSFET  
in a DPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
3
2
STD12N65M2  
650 V  
500 mΩ  
8 A  
1
Extremely low gate charge  
DPAK  
Excellent output capacitance (Coss) profile  
100% avalanche tested  
D(2, TAB)  
Zener-protected  
Applications  
G(1)  
Switching applications  
Description  
S(3)  
AM01476v1_tab  
This device is an N-channel Power MOSFET developed using MDmesh M2  
technology. Thanks to its strip layout and an improved vertical structure, the device  
exhibits low on-resistance and optimized switching characteristics, rendering it  
suitable for the most demanding high efficiency converters.  
Product status link  
STD12N65M2  
Product summary  
Order code  
STD12N65M2  
Marking  
Package  
Packing  
12N65M2  
DPAK  
Tape and reel  
DS10787 - Rev 3 - June 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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