STD12NF06

更新时间： 2024-01-02 18:33:53

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	445K
描述
N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET

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技术参数
数据手册

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STD12NF06 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

STD12NF06 数据手册

STD12NF06

N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK

STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

STD12NF06

60 V

<0.1 Ω

12 A

■

TYPICAL R (on) = 0.08Ω

EXCEPTIONAL dv/dt CAPABILITY

LOW GATE CHARGE

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

■

IPAK

DPAK

TO-252

(Suffix “T4”)

TO-251

(Suffix “-1”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

INTERNAL SCHEMATIC DIAGRAM

steps

therefore

remarkable

manufacturing

reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SWITCHING SPEED

MOTOR CONTROL , AUDIO AMPLIFIERS

SOLENOID AND RELAY DRIVERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 20

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

8.5

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Derating Factor

0.2

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

140

stg

-55 to 175

°C

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(1) I ≤12A, di/dt ≤200A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

(2) Starting T = 25 C, I = 6A, V = 30V

December 2001

1/10

12 3 4 5 6 7...10

中文翻译

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与STD12NF06相关器件

型号	品牌	获取价格	描述	数据表
STD12NF06_09	STMICROELECTRONICS	获取价格	N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STrip
STD12NF06-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
STD12NF06L	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STri
STD12NF06L_07	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06L-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06LAG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPA
STD12NF06LT4	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06T4	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
STD12NF06T4-1	STMICROELECTRONICS	获取价格	N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STrip
STD12NF06T4T4	STMICROELECTRONICS	获取价格	N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STrip