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STD12NF06 PDF预览

STD12NF06

更新时间: 2024-11-19 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 445K
描述
N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET

STD12NF06 数据手册

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STD12NF06  
N-CHANNEL 60V - 0.08 - 12A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STD12NF06  
60 V  
<0.1 Ω  
12 A  
TYPICAL R (on) = 0.08Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
LOW GATE CHARGE  
3
3
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
2
1
1
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
TO-251  
(Suffix “-1”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
INTERNAL SCHEMATIC DIAGRAM  
steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL , AUDIO AMPLIFIERS  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
12  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
8.5  
48  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
30  
W
tot  
C
Derating Factor  
0.2  
15  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
140  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(1) I 12A, di/dt 200A/µs, V V  
, T T  
SD  
DD  
(BR)DSS j JMAX  
o
(2) Starting T = 25 C, I = 6A, V = 30V  
j
D
DD  
December 2001  
1/10  
.

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