Datasheet > STD12NE06L-1

STD12NE06L-1

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	105K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-251AA

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STD12NE06L-1 数据手册

STD12NE06L

N - CHANNEL 60V - 0.09Ω - 12A TO-251/TO-252

STripFET POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STD12NE06L

60 V

< 0.12 Ω

12 A

■

TYPICAL R_DS(on)= 0.09 Ω

EXCEPTIONAL dv/dt CAPABILITY

AVALANCHERUGGED TECHNOLOGY

100 % AVALANCHE TESTED

APPLICATIONORIENTED

CHARACTERIZATION

■

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

DESCRIPTION

This Power MOSFET is the latest developmentof

STMicroelectronics unique ”Single Feature

Size ” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturingreproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL (DISK DRIVES,etc.)

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 20

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.23

W/^oC

V/ns

^oC

dv/dt(¹) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 175

175

T_j

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

( ) I_SD≤ 12 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/9

January 2000

12 3 4 5 6 7...9

中文翻译

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与STD12NE06L-1相关器件

型号	品牌	获取价格	描述	数据表
STD12NE06LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-252AA
STD12NE06T4	STMICROELECTRONICS	获取价格	12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3
STD12NF06	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STri
STD12NF06_09	STMICROELECTRONICS	获取价格	N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STrip
STD12NF06-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
STD12NF06L	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STri
STD12NF06L_07	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06L-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06LAG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPA
STD12NF06LT4	STMICROELECTRONICS	获取价格	N-channel 60V - 0.08з - 12A - DPAK - IPAK STr