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STD12NE06L PDF预览

STD12NE06L

更新时间: 2024-10-31 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 95K
描述
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET

STD12NE06L 数据手册

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STD12NE06L  
N - CHANNEL 60V - 0.09- 12A TO-251/TO-252  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD12NE06L  
60 V  
< 0.12 Ω  
12 A  
TYPICAL RDS(on) = 0.09 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
AVALANCHERUGGED TECHNOLOGY  
100 % AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
1
1
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL (DISK DRIVES,etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
60  
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
12  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
8
A
I
DM()  
Drain Current (pulsed)  
48  
35  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.23  
6
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 12 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/9  
January 2000  

STD12NE06L 替代型号

型号 品牌 替代类型 描述 数据表
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N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
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STD12NF06L_07 STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPA