5秒后页面跳转
STD12NE06LT4 PDF预览

STD12NE06LT4

更新时间: 2024-10-31 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 105K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-252AA

STD12NE06LT4 数据手册

 浏览型号STD12NE06LT4的Datasheet PDF文件第2页浏览型号STD12NE06LT4的Datasheet PDF文件第3页浏览型号STD12NE06LT4的Datasheet PDF文件第4页浏览型号STD12NE06LT4的Datasheet PDF文件第5页浏览型号STD12NE06LT4的Datasheet PDF文件第6页浏览型号STD12NE06LT4的Datasheet PDF文件第7页 
STD12NE06L  
N - CHANNEL 60V - 0.09- 12A TO-251/TO-252  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD12NE06L  
60 V  
< 0.12 Ω  
12 A  
TYPICAL RDS(on) = 0.09 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
AVALANCHERUGGED TECHNOLOGY  
100 % AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
1
1
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL (DISK DRIVES,etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
60  
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
12  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
8
A
I
DM()  
Drain Current (pulsed)  
48  
35  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.23  
6
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 12 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/9  
January 2000  

与STD12NE06LT4相关器件

型号 品牌 获取价格 描述 数据表
STD12NE06T4 STMICROELECTRONICS

获取价格

12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3
STD12NF06 STMICROELECTRONICS

获取价格

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STri
STD12NF06_09 STMICROELECTRONICS

获取价格

N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STrip
STD12NF06-1 STMICROELECTRONICS

获取价格

N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr
STD12NF06L STMICROELECTRONICS

获取价格

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STri
STD12NF06L_07 STMICROELECTRONICS

获取价格

N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06L-1 STMICROELECTRONICS

获取价格

N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06LAG STMICROELECTRONICS

获取价格

Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPA
STD12NF06LT4 STMICROELECTRONICS

获取价格

N-channel 60V - 0.08з - 12A - DPAK - IPAK STr
STD12NF06T4 STMICROELECTRONICS

获取价格

N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STr