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STD12N60M6 PDF预览

STD12N60M6

更新时间: 2024-11-28 14:58:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 1009K
描述
N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

STD12N60M6 数据手册

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STD12N60M6  
Datasheet  
N-channel 600 V, 390 mΩ typ., 9 A, MDmesh M6 Power MOSFET  
in a DPAK package  
Features  
V
R
DS(on)  
max.  
I
D
P
TOT  
Order code  
DS  
TAB  
STD12N60M6  
600 V  
450 mΩ  
9 A  
96 W  
3
2
1
Reduced switching losses  
DPAK  
Lower RDS(on) per area vs previous generation  
Low gate input resistance  
100% avalanche tested  
D(2, TAB)  
Zener-protected  
G(1)  
Applications  
Switching applications  
LLC converters  
Boost PFC converters  
S(3)  
AM01475V1  
Description  
The new MDmesh M6 technology incorporates the most recent advancements to the  
well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics  
builds on the previous generation of MDmesh devices through its new M6  
technology, which combines excellent RDS(on) per area improvement with one of the  
most effective switching behaviors available, as well as a user-friendly experience for  
maximum end-application efficiency.  
Product status link  
STD12N60M6  
Product summary  
Order code  
STD12N60M6  
Marking  
Package  
Packing  
12N60M6  
DPAK  
Tape and reel  
DS13291 - Rev 1 - April 2020  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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