是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 930 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB80NF75LT4 | STMICROELECTRONICS |
获取价格 |
80A, 75V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
STB80PF55 | STMICROELECTRONICS |
获取价格 |
P-CHANNEL 55V - 0.016 ohm - 80A D2PAK STripFE | |
STB80PF55_06 | STMICROELECTRONICS |
获取价格 |
P-channel 55V - 0.016ヘ - 80A - TO-220 - D2PAK | |
STB80PF55_10 | STMICROELECTRONICS |
获取价格 |
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK S | |
STB80PF55T4 | STMICROELECTRONICS |
获取价格 |
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK | |
STB8120 | SMC |
获取价格 |
SCHOTTKY RECTIFIER | |
STB8444 | SAMHOP |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
STB85N15F4 | STMICROELECTRONICS |
获取价格 |
85A, 150V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | |
STB85NF3LL | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE | |
STB85NF3LL_06 | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET |