SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○Power Management Switch Applications
○High-Speed Switching Applications
Unit : mm
1.6±0.05
1.2±0.05
•
•
•
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : R = 136 mΩ (max) (@V
= -2.5 V)
= -1.8 V)
= -1.5 V)
on
GS
GS
GS
1
2
6
5
: R = 204 mΩ (max) (@V
on
: R = 364 mΩ (max) (@V
on
Absolute Maximum Ratings (Ta = 25°C)
4
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-20
± 8
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-1.8
D
Drain current
A
Pulse
I
-3.6
DP
1,2,5,6 :Drain
3 :Gate
4 :Source
Drain power dissipation
Channel temperature
P
(Note 1)
500
mW
°C
D
T
ch
150
Storage temperature range
T
stg
−55~150
°C
ES6
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2N1A
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= −1 mA, V
= −1 mA, V
= 0
−20
−12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= +8 V
Drain cut-off current
I
V
V
V
V
= −20 V, V
= 0
⎯
−10
±1
μA
μA
V
DSS
DS
GS
DS
DS
GS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 8 V, V
= 0
⎯
⎯
GSS
V
= −3 V, I = −1 mA
−0.3
2.7
⎯
⎯
−1.0
⎯
th
D
|Y |
fs
= −3 V, I = −0.9 A
(Note 2)
= −2.5 V (Note 2)
= −1.8 V (Note 2)
= −1.5 V (Note 2)
5.4
95
S
D
I
I
I
= −1.0 A, V
= −1.0 A, V
= −0.1 A, V
136
204
364
⎯
D
D
D
GS
GS
GS
Drain-Source on-resistance
R
mΩ
⎯
122
137
568
75
DS (ON)
⎯
Input capacitance
C
⎯
iss
V
= −10 V, V
= 0
GS
DS
pF
ns
Output capacitance
C
⎯
⎯
oss
f = 1 MHz
Reverse transfer capacitance
C
⎯
67
⎯
rss
on
Turn-on time
t
t
V
V
= −10 V, I = −0.9 A
⎯
29
⎯
DD
GS
D
Switching time
= 0 ~ −2.5 V, R = 4.7 Ω
G
Turn-off time
⎯
⎯
⎯
⎯
⎯
39
10.6
7.4
3.3
0.8
⎯
⎯
off
Total gate charge
Q
g
V
V
= −16 V, I
= − 4 V
= -1.8 A,
DS
DS
GS
nC
V
Gate-Source charge
Q
⎯
gs
gd
Gate-Drain charge
Q
⎯
Drain-Source forward voltage
V
I
= 1.8 A, V = 0
GS
(Note 2)
1.2
DSF
D
Note 2: Pulse test
1
2007-11-01