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SSM6K22FE(TE85L) PDF预览

SSM6K22FE(TE85L)

更新时间: 2024-11-05 14:44:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 310K
描述
SSM6K22FE(TE85L)

SSM6K22FE(TE85L) 技术参数

生命周期:End Of Life包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

SSM6K22FE(TE85L) 数据手册

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SSM6K22FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)  
SSM6K22FE  
High Current Switching Applications  
Unit: mm  
DC-DC Converter  
Suitable for high-density mounting due to compact package  
Low on resistance:  
R
R
= 170 m(max) (@V  
= 230 m(max) (@V  
= 4.0 V)  
= 2.5 V)  
DS(ON)  
GS  
DS(ON)  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
±12  
1.4  
5.6  
500  
V
V
DS  
1,2,5,6 : Drain  
Gate-source voltage  
V
GSS  
3
: Gate  
DC  
I
4
: Source  
D
Drain current  
A
Pulse  
I
DP  
P
D
JEDEC  
JEITA  
-
Power dissipation  
mW  
(Note 1)  
-
Channel temperature  
T
150  
°C  
°C  
ch  
TOSHIBA  
2-2N1A  
Storage temperature range  
T
stg  
55 to 150  
Weight: 3 mg (typ.)  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )  
2
Marking  
Equivalent Circuit (Top View)  
6
5
KD  
2
4
6
5
4
1
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is  
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
1
2010-02-17  

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