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SSM6K32TU

更新时间: 2024-11-21 03:50:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器转换器继电器小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 612K
描述
Relay drive, DC/DC converter application

SSM6K32TU 技术参数

生命周期:Obsolete包装说明:2-2T1D, UF6, 6 PIN
针数:6Reach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.44 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM6K32TU 数据手册

 浏览型号SSM6K32TU的Datasheet PDF文件第2页浏览型号SSM6K32TU的Datasheet PDF文件第3页浏览型号SSM6K32TU的Datasheet PDF文件第4页浏览型号SSM6K32TU的Datasheet PDF文件第5页浏览型号SSM6K32TU的Datasheet PDF文件第6页 
SSM6K32TU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM6K32TU  
Unit: mm  
Relay drive, DC/DC converter application  
z
z
4Vdrive  
Low on resistance:  
R
on  
= 440m(max) (@V  
= 4 V)  
GS  
R
on  
= 300m(max) (@V  
= 10 V)  
GS  
Absolute Maximum Ratings (Ta = 25)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-Source voltage  
Gate-Source voltage  
V
60  
±20  
2
V
V
DS  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
6
DP  
Drain power dissipation  
Channel temperature  
P
(Note 1)  
500  
150  
55~150  
mW  
°C  
D
T
ch  
1,2,5,6 : Drain  
3
4
: Gate  
: Source  
Storage temperature range  
T
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2T1D  
Weight: 7.0 mg (typ.)  
Note 1: Mounted on FR4 board.  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
Electrical Characteristics (Ta = 25℃)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±16V, V = 0V  
Min  
Typ.  
Max  
Unit  
I
V
V
60  
0.8  
1.0  
±10  
100  
μA  
μA  
V
GSS  
GS  
DS  
DS  
Drain cut-off current  
I
= 60V, V  
= 0V  
= 0V  
DSS  
(BR) DSS  
GS  
GS  
Drain-Source breakdown voltage  
Gate threshold voltage  
V
I
= 10mA, V  
D
V
V
V
V
V
= 10V, l = 1mA  
2.0  
0.44  
0.30  
V
th  
DS  
GS  
GS  
DS  
D
= 4V, I = 1A  
0.33  
0.23  
2.0  
140  
20  
D
Drain-Source ON resistance  
R
Ω
DS (ON)  
= 10V, I = 1A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10V, I = 1A  
S
D
C
iss  
rss  
oss  
V
= 10V, V  
= 0V  
GS  
DS  
pF  
Reverse transfer capacitance  
Output capacitance  
Rise time  
C
f = 1MHz  
C
65  
t
140  
210  
470  
1600  
5.0  
3.6  
r
V
V
30 V, I = 1 A  
DD  
GS  
D
Turn-on time  
Switching time  
t
on  
ns  
Fall time  
t
f
= 0~10 V, R = 50 Ω  
G
Turn-off time  
Total gate charge  
t
off  
Q
g
V 48V, V  
DD  
= 10V  
GS  
Q
nC  
V
Gatesource charge  
Gatedrain charge  
gs  
gd  
I
= 2A  
D
Q
1.4  
Drain-Source forward voltage  
V
I
= -2A, V  
= 0V  
GS  
1.5  
DSF  
D
1
2007-11-01  

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