Datasheet > SSM6K517NU

SSM6K517NU

更新时间： 2024-11-19 14:58:23

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SSM6K517NU 数据手册

SSM6K517NU

MOSFETs Silicon N-Channel MOS (U-MOS-H)

SSM6K517NU

1. Applications

•

Power Management Switches

•

High-Speed Switching

2. Features

(1) 1.8-V drive

(2) Low drain-source on-resistance

: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V)

3. Packaging and Pin Assignment

1, 2, 5, 6: Drain

3: Gate

4: Source

UDFN6B

Start of commercial production

2020-04

2020-06-02

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
SSM6K518NU	TOSHIBA	获取价格	N-ch MOSFET, 20 V, 6 A, 0.033 Ω@4.5V, SOT-122
SSM6K781G	TOSHIBA	获取价格	N-ch MOSFET, 12 V, 7.0 A, 0.018 Ω@4.5V, WCSP6
SSM6K804R	TOSHIBA	获取价格	N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F
SSM6K809R	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, TSOP6F
SSM6K810R	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6K819R	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 10 A, 0.0258 Ω@10V, TSOP6
SSM6L05FU	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L05FU(TE85L)	TOSHIBA	获取价格	SSM6L05FU(TE85L)
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SSM6L05FU_07	TOSHIBA	获取价格	Power Management Switch