Datasheet > SSM6K517NU

SSM6K517NU

更新时间： 2023-12-20 18:46:30

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SSM6K517NU 数据手册

SSM6K517NU

MOSFETs Silicon N-Channel MOS (U-MOS-H)

SSM6K517NU

1. Applications

•

Power Management Switches

•

High-Speed Switching

2. Features

(1) 1.8-V drive

(2) Low drain-source on-resistance

: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V)

3. Packaging and Pin Assignment

1, 2, 5, 6: Drain

3: Gate

4: Source

UDFN6B

Start of commercial production

2020-04

2020-06-02

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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