Datasheet > SSM6K407TU,LF(T

SSM6K407TU,LF(T

更新时间： 2024-10-02 20:59:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	339K
描述
Small Signal Field-Effect Transistor

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技术参数
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SSM6K407TU,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

SSM6K407TU,LF(T 数据手册

SSM6K407TU

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K407TU

Unit: mm

○DC−DC Converter, Relay Drive and Motor Drive

Applications

2.1±0.1

1.7±0.1

4V drive

Low ON-resistance

: R = 440mΩ (max) (@V

= 4 V)

: R = 300mΩ (max) (@V

= 10 V)

Absolute Maximum Ratings (Ta = 25℃) (Note)

1,2,5,6 : Drain

: Gate

: Source

Characteristic

Drain–source voltage

Symbol

Rating

Unit

UF6

DSS

Gate–source voltage

±20

GSS

JEDEC

JEITA

⎯

Drain current

⎯

Pulse

TOSHIBA

2-2T1D

Drain power dissipation

Channel temperature

Storage temperature

(Note1)

500

°C

150

Weight: 7mg (typ.)

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)

Start of commercial production

2008-01

2014-03-01

12 3 4 5 6 7

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