Datasheet > SSM6K406TU,LF(T

SSM6K406TU,LF(T

更新时间： 2024-10-02 19:48:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	233K
描述
Small Signal Field-Effect Transistor

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技术参数
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SSM6K406TU,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

SSM6K406TU,LF(T 数据手册

SSM6K406TU

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K406TU

○High-Speed Switching Applications

•

4.5-V drive

Low ON-resistance: R = 38.5 mΩ (max) (@V

Unit: mm

•

= 4.5 V)

= 10 V)

2.1±0.1

1.7±0.1

= 25.0 mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25˚C)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

±20

DSS

Gate–source voltage

GSS

4.4

Drain current

Pulse

8.8

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

500

°C

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

UF6

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

2-2T1D

Weight: 7.0 mg (typ.)

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )

Marking

Equivalent Circuit (top view)

KNE

Start of commercial production

2010-02

2014-03-01

12 3 4 5 6

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