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SSM6K406TU,LF(T PDF预览

SSM6K406TU,LF(T

更新时间: 2024-11-21 19:48:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 233K
描述
Small Signal Field-Effect Transistor

SSM6K406TU,LF(T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

SSM6K406TU,LF(T 数据手册

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SSM6K406TU  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type  
SSM6K406TU  
High-Speed Switching Applications  
4.5-V drive  
Low ON-resistance: R = 38.5 mΩ (max) (@V  
Unit: mm  
= 4.5 V)  
= 10 V)  
on  
GS  
GS  
2.1±0.1  
1.7±0.1  
R
on  
= 25.0 mΩ (max) (@V  
Absolute Maximum Ratings (Ta = 25˚C)  
1
2
3
6
5
4
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
30  
±20  
V
V
DSS  
Gate–source voltage  
GSS  
DC  
I
4.4  
D
Drain current  
A
Pulse  
I
8.8  
DP  
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note 1)  
500  
mW  
°C  
D
T
ch  
150  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
UF6  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-2T1D  
Weight: 7.0 mg (typ.)  
Note 1: Mounted on an FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )  
Marking  
Equivalent Circuit (top view)  
6
5
4
5
4
6
KNE  
1
2
3
1
2
3
Start of commercial production  
2010-02  
1
2014-03-01  

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