SSM6L10TU

更新时间： 2024-01-25 17:14:18

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
10页	208K
描述
High Speed Switching Applications

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SSM6L10TU 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.82
Is Samacsys：	N	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	0.5 A
最大漏极电流 (ID)：	0.5 A	最大漏源导通电阻：	0.145 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	0.5 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SSM6L10TU 数据手册

SSM6L10TU

TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type

SSM6L10TU

High Speed Switching Applications

•

Optimum for high-density mounting in small packages

Low on-resistance Q1: R = 395mΩ (max) (@V

= 1.8 V)

= -1.8 V)

Unit: mm

Q2: R = 980mΩ (max) (@V

2.1±0.1

1.7±0.1

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

± 12

0.5

Gate-Source voltage

GSS

Drain current

Pulse

1.5

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

-20

± 8

Gate-Source voltage

GSS

1.Source1 4.Source2

2.Gate1

3.Drain2

5.Gate2

6.Drain1

-0.5

-1.5

Drain current

Pulse

UF6

JEDEC

JEITA

―

Absolute Maximum Ratings(Q1,Q2 Common)(Ta = 25°C)

Characteristics

Symbol

Rating

500

Unit

TOSHIBA

2-2T1B

Drain power dissipation

(Note 1)

Weight: 7.0 mg (typ.)

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5 6 7...10

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