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SSM6L11TU(TE85L) PDF预览

SSM6L11TU(TE85L)

更新时间: 2024-01-10 15:49:21
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 214K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,500MA I(D),SOT-363VAR

SSM6L11TU(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大漏极电流 (Abs) (ID):0.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SSM6L11TU(TE85L) 数据手册

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SSM6L11TU  
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type  
SSM6L11TU  
High Speed Switching Applications  
Optimum for high-density mounting in small packages  
Low ON-resistance Q1: R  
Q2: R  
= 395m(max) (@V  
= 430m(max) (@V  
= 1.8 V)  
= -2.5 V)  
DS(ON)  
GS  
Unit: mm  
2.1±0.1  
DS(ON)  
GS  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
1.7±0.1  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
1
2
6
5
V
20  
± 12  
0.5  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
D
Drain current  
A
4
3
Pulse  
I
1.5  
DP  
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
-20  
± 12  
-0.5  
-1.5  
V
V
DS  
Gate-source voltage  
V
GSS  
1.Source1 4.Source2  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
DC  
I
D
Drain current  
A
Pulse  
I
DP  
UF6  
Absolute Maximum Ratings (Q1,Q2 Common)  
(Ta = 25°C)  
JEDEC  
JEITA  
Characteristics  
Symbol  
Rating  
500  
Unit  
mW  
P
TOSHIBA  
2-2T1B  
D
Drain power dissipation  
(Note 1)  
Weight: 7.0 mg (typ.)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
55 to 150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board. (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
2
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
3
Q1  
K8  
Q2  
1
2
1
2
3
1
2009-10-07  

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